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September 16, 2008 @ 10 a.m. Central
Shrinking critical dimensions with correspondingly thinner metal layers and shorter stack heights have been alerting all sectors to rethink traditional chemical mechanical planarization (CMP) chemistries and processes. Panelists will discuss the demands for low-damage processes and excellent uniformity as well as new ways to address those challenges, particularly in copper metallization and barrier steps for interconnects.
Moderator:
| Aaron Hand Executive Editor, Electronic Media Semiconductor International |
Panelists:
| Mark Buehler Intel Corp. Semiconductor Technology Development Department Portland, Ore. |
| Jan Vaes IMEC Leuven, Belgium |
| Reinhold Dauskardt Stanford University Department of Materials Science and Engineering Stanford, Calif. |
| Rajiv Singh University of Florida Department of Materials Science and Engineering Gainesville, Fla. |
Sponsors:
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Posted: Aug 19, 2008