Semiconductor International - October 01, 2006
Cover Story
Thermal Processing Takes on New Materials, Lower Temps
Of all the thermal oxides used in device manufacturing that must be precisely grown, doubtless the most critical of all these is gate oxide formation, which has become increasingly thinner from process node to process node. Over the years, gate oxide has gone from a thickness of ~250 Å in the late 1980s to 10 or fewer atomic layers, depending on the application.
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