Semiconductor International - October 01, 2005
Cover Story
The Advantages of Capping Copper With Cobalt
A layer of a cobalt-containing compound, such as CoWP, selectively deposited on top of the copper line provides dramatic increases in electromigration performance, while potentially eliminating the need for a dielectric etch-stop layer, which would improve the effective k value of the overlying dielectric.
Features
Technology News
| Departments
Special Report
|
