Semiconductor International - January 01, 2005
Cover Story
Damage-Free Cleaning Beyond 65 nm
The 65 and 45 nm nodes bring with them not only smaller features, but also such structures as stacked capacitors and deep trenches, along with challenging materials like low-k dielectrics and SOI wafers. FEOL and BEOL cleaning solutions will have to maintain particle removal efficiency while being increasingly mindful of structural damage and material loss.
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