Semiconductor International - June 01, 2004
Cover Story
Dielectric Etch Faces Material, Process Choices
With the move to 193 nm lithography, dielectric etch is going through a major transition point, facing issues induced by a balancing act of organic, inorganic and metal materials, as well as etch selectivity questions. These conditions are exacerbated as the technology migrates toward the 90 nm node, and extreme high aspect ratios complicate etch and photoresist integrity and selectivity.
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