Semiconductor International - January 01, 2003
Cover Story
Industry Confronts Sub-100 nm Challenges
As 90 nm devices enter the pilot production phase, there are still significant obstacles to be overcome. In the front end, critical layers must be patterned with 193 nm lithography, which is still fairly immature. Back-end yields are hindered by the integration of first-generation low-k dielectrics with copper.
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