Semiconductor International - January 01, 2002
Cover Story
Fabricating 90 nm Devices by 2004
Today's research and development on 90 nm devices involves improving the manufacturability of 193 nm lithography, developing better and faster metrology, and bringing up yields on copper interconnects with low-k dielectrics (k=2.8). The work to be done is even more daunting than at the 130 nm node, with breakthroughs and substantial progress needed in many areas.
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