Semiconductor International - February 01, 1998
Cover Story
Lithography: 0.18 µm and Beyond
At A Glance...
The technology path toward device generations at and beyond 0.18 µm is currently the subject of much discussion. With the advent of high NA DUV exposure tools and the development of a new generation of high-performance DUV single-layer resists, 248 nm lithography will play a critical role. Beyond 0.
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