The latest news and information on semiconductor lithography, including optical, EUV, e-beam, nanoimprint, maskless and other lithography techniques; exposure tools; resists; and masks/templates.
Cymer Hitting Its EUV LPP Source Goals David Lammers, News Editor - 11/12/2008
Cymer said it is running its laser-produced plasma (LPP) EUV source for eight hours at a time at 50 W of pulsed power. By the end of the year, Cymer expects its source to generate 100 W of sustained power during the time of the exposure of the die, enough power for the pre-production EUV tools expected next year from the major scanner manufacturers, said David Myers, vice president of Cymer’s EUV source program. More
Applied Announces TSV Etcher, In-Fab Mask Inspection Capability David Lammers, News Editor - 12/01/2008
Applied Materials Inc. announced its Silvia deep silicon etcher for creation of the smooth sidewalls required for 3-D interconnects. Also, the company said it is offering a new version of its Aera2 mask inspection tool for use within a fab’s lithography cell, rather than at an external mask shop. The Aera2 for Lithography system is needed for double patterning, where mask critical dimensions must be closely watched, the compay said.
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Elpida uses immersion litho for 50-nm process DDR3 SDRAM By Suzanne Deffree, Managing Editor, News - 11/26/2008
The 50-nm process DDR3 SDRAM was developed using 193-nm immersion lithography technology and copper interconnect technology and has a chip size of less than 40-mm-squared.
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SUSS MicroTec Names New CEO Staff - 11/25/2008
Frank Averdung, currently managing director at Carl Zeiss SMS, will move into the CEO position June 1. SUSS MicroTec let its previous CEO go in early October.
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FSI Receives Repeat Polaris Order From GaAs Foundry Staff - 11/19/2008
Orders within the broadband wireless and wireline communications device suppliers are expected to increase, with FSI placing emphasis on continued expansion into this key market.
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Advancements in EUV Optics Technology Takaharu Miura and Katsuhiko Murakami, Nikon Corp.; Holly Magoon and Andrew Barada, Nikon Precision Inc.; Martin McCallum, Nikon Precision Europe - 11/01/2008
Extreme ultraviolet lithography (EUVL) is the most likely lithography solution at 22 nm half-pitch and beyond. The transition to EUVL presents significant challenges in the areas of projection and illumination optics, as well as contamination control, but marked improvements have been made in these areas.
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IMEC Calls EUV Performance ‘Impressive’ Laura Peters, Editor-in-Chief - 10/23/2008
After only five months’ experience with a new source on its Alpha Demo Tool (ADT), Kurt Ronse, director of the Advanced Lithography Program at IMEC (Leuven, Belgium), said he is impressed with the extreme ultraviolet (EUV) tool’s stability and performance to date. IMEC has demonstrated the ability to resolve 35 nm flash patterns with the scanner.
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ASML Presents Faster ArF Scanner, Says EUV on Track for 2010 Laura Peters, Editor-in-Chief - 10/20/2008
ASML said it is on schedule for 2010 delivery of its first EUV production system. At a research review meeting in Veldhoven, ASML introduced a new positioning measurement system to improve overlay control by 50% to <2 nm for a Twinscan immersion system.
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Views on News David Lammers, News Editor, Semiconductor International October 23, 2008 When Is No Really a No?
An executive at a major IC manufacturer likes to tell the story about a meeting in 19... More
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Technical Articles
Advancements in EUV Optics Technology Takaharu Miura and Katsuhiko Murakami, Nikon Corp.; Holly Magoon and Andrew Barada, Nikon Precision Inc.; Martin McCallum, Nikon Precision Europe, 11/01/2008
Extreme ultraviolet lithography (EUVL) is the most likely lithography solution at 22 nm half-pitch and beyond. The transition to EUVL presents significant challenges in the areas of projection and illumination optics, as well as contamination control, but marked improvements have been made in these areas....
Looking for Truth in Conferences Aaron Hand, Executive Editor, Electronic Media, 09/01/2008 Autumn is a busy conference time for the lithography world — one piled on top of another as we make our way through September and October. But it has become increasingly difficult to attend conferences and still avoid the plethora of corporate motivational speeches....
Self-Aligned Double Patterning Gains NAND Flash Favor Chris Bencher, Applied Materials Inc., Santa Clara, Calif., 09/01/2008 Whether you call it frequency doubling, pitch reduction, spacer mask patterning or SADP, sidewall spacer transfer patterning techniques are being adopted at an accelerating rate by NAND flash device makers. This article describes the generic process flows and demonstrated capabilities of the technique....
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Advancements in EUV Optics Technology
