Semiconductor International NewsBreak
Semiconductor International NewsBreak
TOP STORY... June 23, 2008

Sematech Reports
Progress at VLSI Meeting
At the 2008 Symposium on VLSI Technology, Sematech researchers described progress with gallium arsenide (GaAs) and silicon germanium (SiGe) channels. For SiGe transistors, the researchers discovered that a higher fraction of germanium and a very thin silicon capping layer provided the best results. Also, Sematech and University of Florida researchers presented work on the effect of strain on GaAs devices.
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 MORE NEWS...

ASMI Spurns $800M Bid for Front-End Activities

North American B2B Ratio Dropped in May

Stanford Researchers Overcome Mispositioned CNTs to Create Logic Circuits

Hitachi Zosen Laser System Etches ITO Films on Large Solar Panels

Consumer Applications Push MEMS to New Volumes

Report Claims SMIC Plans to Make Polysilicon With German Partner

Toshiba, IBM Bonding Approach Achieves Higher Hole Mobility

MORE >>

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Perspectives From The Leading Edge:
ASET Drives 3-D Integration Workshop in Tokyo
Phil Garrou details the 3-D presentations at a seminar organized by the Association of Super-Advanced Electronics Technologies (ASET) consortium, with presenations from Amkor, Intel and others. Shekhar Borkar from the Microprocessor Technology Labs at Intel gave a system-level perspective on the 80-core multiprocessor that Intel first revealed was being prototyped with through-silicon vias (TSVs) back in 2006. Because DRAM technology was not available, they used SRAM to demonstrate the concept. This initial TSV pitch of 190 microns is described as "modest" but adequate to deliver "...coarse-level integration of memory and power delivery to the CPU," he said.

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