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The latest information on semiconductor packaging including wafer-level and chip-scale 3-D integration, wafer bumping, die and wire bonding, and encapsulation.

  • Fan-Out Packaging Dispute Resolves in IP Licensing Deal

    Sally Cole Johnson, Contributing Editor, February 3, 2010
    fan-out packaging TS (EPIC) (020410-EPIC-TS.jpg) What began as a patent dispute over fan-out packaging technologies has resulted in an IP agreement that will ultimately make it easier for packaging subcontractors to license Epic's ChipsFirst and Freescale's RCP technologies in one step, said James Kohl, Epic's CEO.  More
  • TI Boosts Spending on Assembly and RFAB

    David Lammers, News Editor, January 27, 2010
    TI Expansion TS (012710-TIWorker330.jpg) With demand strong for computer power ICs, LED TV backlight controllers and other analog products, Texas Instruments is expanding test and assembly capacity to meet customer delivery agreements. Also, a pilot line at the new 300 mm analog RFAB is up and running, and TI expects full production there by the end of the year.  More
  • Allvia Offers New TSV Reliability Data

    Sally Cole Johnson, January 25, 2010
    Allvia foundry TS (012510-Allvia330.jpg) Allvia is stepping forward with details about its full reliability tests, and the data may help customers decide which products are feasible, said CEO Sergey Savastiouk. To avoid CTE issues, Allvia uses a silicon interposer between two stacked substrates and connects them with TSVs. "Our target is to add passive elements on the substrate," he said.  More
  • GlobalFoundries Adds Qualcomm, Supports Gate-First Technology at 28 nm Generation

    David Lammers, News Editor, January 7, 2010
    GlobalFoundries 28 nm TS (10709Global330.jpg) GlobalFoundries is adding Qualcomm to its customer base, starting with 45 nm wafers and moving to a 28 nm LP process that includes high-k/metal gate technology. Prior to the announcement, John Pellerin, director of technology development at GlobalFoundries, said the gate-first approach to high-k deposition has die size advantages over the gate-last approach supported by rival foundry TSMC.  More
  • Binghamton U. Offers R&D Collaboration

    Sally Cole Johnson, Contributing Editor, December 28, 2009
    Binghamton University TS (122809_younis06_TS.jpg) Binghamton University's New York State Center of Excellence in Small Scale Systems Integration & Packaging (S3IP) works on a wide variety of R&D projects with industry, and makes its state-of-the-art facilities and tools available to partners and members. R&D collaboration with universities is becoming an appealing option for many companies looking to share costs, center officials said.  More
  • Despite Downturn, 3-D Spending Continues

    Philip Garrou, Contributing Editor - Microelectronic Consultants of NC, December 23, 2009
    TechSearch 3-D Forecast Investments in 3-D integration continue, analysts said at the the RTI 3-D Architectures for Semiconductor Integration and Packaging conference. Analyst Jan Vardaman at TechSearch said she is tracking more than 50 3-D IC programs worldwide. Yole Developpement has identified 15 300 mm 3-D TSV pilot lines.  More
  • Silicon Interposers Bridge to 3-D TSVs

    Philip Garrou, Contributing Editor - Microelectronic Consultants of NC, December 22, 2009
    Silicon interposers TS (122209-ASE330.jpg) The RTI 3-D-ASIP conference attracted most of the top players in the industry, who outlined the challenges still facing 3-D volume manufacturing, including wafer thinning yields and the need for better EDA tools. Many of the speakers said they see silicon interposers with TSVs (silicon 2.5-D) as a bridge to full 3-D ICs.  More
  • Nvidia's Chen Calls for Zero Via Defects

    David Lammers, News Editor, December 7, 2009
    Nvidia TS (120809Vias330.jpg) Nvidia needs zero defects from its foundry partners, particularly in the vias on its leading-edge graphics processors, said John Chen, vice president of technology and foundry operations at the GPU powerhouse. With 3.2 billion transistors on its 40 nm graphics processor now coming on the market, the 7.2 billion vias have become a source of problems that the industry must learn to deal with, Chen said in a keynote speech at IEDM.  More

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Phil Garrou

Perspectives From the Leading Edge

Philip Garrou, Consultant
November 20, 2009
3D News: Applied/Semitool, TSMC, Ziptronix
Applied By now we have all seen the headlines that Applied Materials has acquired...
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Phil Garrou

Perspectives From the Leading Edge

Philip Garrou, Consultant
November 17, 2009
RTI 3D ASIP, Aviza, Jenoptik Laser Dicing
RTI 3D ASIP It was 2004 when RTI held its first 3D conference, long before 3D...
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Phil Garrou

Perspectives From the Leading Edge

Philip Garrou, Consultant
November 6, 2009
Taiwanese Focus on 3D IC
PFTLE recently covered 3D activities at ITRI (see PFTLE, “3D IC at...
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Phil Garrou

Perspectives From the Leading Edge

Philip Garrou, Consultant
August 22, 2009
Semicon TechXPOTs
Semicon West scheduled a series of TechXPOTs during the show that were actually...
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Technical Articles

  • Reversing the Electronic Assembly Process

    Joseph Fjelstad, Verdant Electronics, Cupertino, Calif. 12/01/09
    By reversing the electronic assembly process, it's possible to eliminate solder and cut waste. The Occam process is a simplified approach that is reliable and cost-effective.
  • Encoders Provide Path to High-Resolution Positioning

    Wolfgang Holzapfel, Dr. Johannes Heidenhain GmbH, Traunrent, Germany 09/01/09
    High-resolution interferential encoders, when chosen, calibrated and used appropriately, are instrumental to the positioning performance of steppers, inspection tools and dicing machines.
  • Imaging Bonded Wafer Defects for 3-D

    Shari Farrens and Sumant Sood, Wafer Bonder Division, SUSS MicroTec; Ray Thomas, SonoLab Manager, Sonoscan Inc. 08/01/09
    The range of products whose fabrication depends on wafer-to-wafer bonding is growing rapidly, and includes MEMS, wafer-level packaging and various types of 3-D integration. A practical, acoustic imaging technique is applied to bonded wafer pairs to image interface defects and wafer scratches in various materials.

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