• Sematech Seeks EUV Mask Tool Funding

  David Lammers, News Editor, June 30, 2009
  Few commercial suppliers are stepping up to develop the EUV mask inspection tools that will be needed for 22 nm EUV patterning, said Bryan Rice, director of lithography at Sematech. The consortium is organizing a meeting at SEMICON West of government, consortia and private industry leaders to develop financial support for the EUV mask infrastructure.  More

• Solar Metrology Gets Serious

  Paula Doe, Contributing Editor, SEMI, San Jose, June 12, 2009
  Suppliers of optical inspection systems are improving central data management capabilities and tool uptime. The ramp up of solar cell production volume is spurring development of better inspection and metrology tools.  More

• EUV Reduced to an Engineering Problem

  Laura Peters, Editor-in-Chief, June 9, 2009
  EUV seems to be finally at the stage of "just an engineering problem," though a sufficiently powerful and reliable source has yet to be worked out. ASML's Martin van den Brink said his company plans to introduce a production EUV tool, capable of delivering 60 wph throughput, next year.  More

• Focus on Solvable Problems

  John Williams, Director of Product Marketing, Semiconductor Solutions, FEI, www.fei.com, June 1, 2009
  While we are currently experiencing a more severe electronics downturn than anyone would have imagined, during this grave economic crisis, investment in R&D has fortunately continued. Not only can these investments lead to the next breakthrough technology, but they are also providing some much-needed sustenance for the semiconductor equipment industry during these difficult days.  More

• Testing Multi-Functional Power Management ICs

  Tom Chambers, Teradyne Inc., North Reading, Mass., June 1, 2009
  Cell phone functionality and battery life drive the PMIC market. New test strategies enable faster silicon debug and a quick release to production.  More

• Control Strategy for Wafer-Edge Defects

  M.F. Hsu and J.H. Yang, Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC), Hsinchu, Taiwan; E. Yang, H. Chen, M. Ng, M. Li and C. Perry-Sullivan, KLA-Tencor Corp., Milpitas, Calif., June 1, 2009
  Identifying and resolving systematic process issues on edge die before they migrate to interior die prevents production yield loss and enables faster yield ramp.  More

• How CD-SEMs Complement Scatterometry

  Alexander E. Braun, Senior Editor, June 1, 2009
  Like competing Siamese twins, CD-SEM and scatterometry enable and push each other to higher levels of capabilities and evolving applications.  More

• Metrologists: Measure Twice, Process Once

  Alexander E. Braun, Senior Editor, May 14, 2009
  IBM’s T.C. Chen, Alain Diebold of CNSE, and J. Alexander Liddle of NIST were among the metrology experts who spoke at the 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics. The conference was held this week at the College of Nanoscale Science and Engineering (CNSE) at the University at Albany, N.Y.  More

Next ›

• Resource Center
• Browse Categories
• Browse Companies

Most Recent Resources

• Characterization and Optimization of Single Wafer Processing...
• The Lean Supply Chain Report - Lean Concepts Transcend Manufacturing...
• Cable Particulation Study for Clean Room Environments
• Innovative Scratch-Resistant Solutions for DRIE Processes