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.......If it's Thursday it must be San Jose
June 8, 2008

A few weeks back, while on the Suss / STS / NeXX road tour across the US, I felt like I was on one of those tours of Europe that were popular back in the 60’s. You know...the ones where you visit one country per day and after a while the only way you know what day it is, is by the country you are in. By the time Thursday in San Jose rolled around I felt like I was repeating myself....cause I was, only in different cities. As the slides continue to flip you find yourself thinking ...”..didn’t I just cover that one ??”

 

In San Jose it was great seeing Ed Korczynski in the audience. Ed is Sr technical editor over at Solid State Technology and his blog, over there, is one of my favorites. I like when things are logical....Ed seems to be the same way.

 

Last week I said I’d make some comments on the road tour presentation that Bob Lanzone, of Amkor, made in RTP earlier in the week. Bob, who gave no handout, is having trouble getting a lot of that material cleared for this blog, so while I’m waiting, I’ll make some comments on the OSATS in general. Two years ago, to the man, Amkor, ASE and STATSChipPac , were espousing the position that THEY would be doing the via fabrication in future 3D integration manufacturing scenarios. More evidence of that position comes from the EMC-3D consortium (started ca 2.5 years ago). If you go to their web page you’ll see that they are focused on a vias last approach which was in vogue at the time.

 

If you ever worked with me , or, are a reader of this blog you know that one of Garrou’s rules is “ ...do not be misled by the literature. Early on in a technology development, engineers do processing the easiest way they can to prove out the device concept. They use the tools that they have on hand and the unit operations that are available...they are not working on manufacturability or cost reduction” So while the overwhelming # of 3D papers are still written about vias last, logic and a basic understanding of the microelectronics business infrastructure, have told me for quite a while now that vias first at the foundry or the IDM make the most sense. OSATS will be relegated to “...thinning , bonding, backside redistribution and packaging” which is really what they are good at. The labor is cleanly divided this way and everything makes sense. There have been a lot of “nay sayers” the past few years, but the recent announcement by TSMC, declaring themselves a player at the 3D integration table, has slowed that down quite a bit.

 

Anyway, the OSATS in general, and Amkor in particular ( not only Lanzone but also CJ Berry and Lee Smith), now seem to be aligned with this concept.... cause it makes technological and business sense.

 

Getting back to Lanzone’s presentation, Bob indicated that Amkor is seeing 3D designs where memory is being de-embedded ( or is it disembedded ??) from devices and F2F bonded on top of it. Are we seeing acceptance of the 3D concept that optimizing processes individually and then mating them is in the long run a better way to go ?? Recall I mentioned last week that Tezzaron is also seeing acceptance of such “split die technology”. If the basic concepts of 3D are valid....this also makes sense and thus we will see this as a growing trend.

 

BEWARE OF THE ASPECT RATIO (AR)

 

I’ll finish off the road tour comments with a rant on one of my favorite 3D “pet peeves” ASPECT RATIO. I first brought this up in public at the Semitool Peaks for Packaging conference last fall. It involves another Garrou rule for field engineers and technical sales folks “ always ask the customer what he needs and then make sure you challenge him as to why ! “

 

When the equipment and materials vendors meet with potential 3D customers and ask what they will require, the customers are “requesting the moon”. You know what I mean here...if you’re a dielectric supplier your customers ask for a Dk < 1, a chameleon CTE and a cure temperature of 25 °C.

 

In this case it is important to know what aspect ratios will be required for various diameter vias both in terms of making the holes and filling them. Most COO models show that via formation and via filling are the major cost obstacles for 3D ( but this obviously depends on size, pitch and AR). What I’m seeing is the tool vendors and materials suppliers working hard on aspect ratios of 10:1 and 20:1 . When I ask them exactly what applications these AR are for, they cannot answer....but they know the customers have asked for such dimensions.

 

To agree with the position that I will take (below) the only leap of faith that you need to make is that as 3D technology evolves and all applications see via and pitch shrinkage , along with this will come a decrease in layer thickness. The tests that have been done so far show no deleterious effects from backside thinning down to sub 5 um Si, so electrical performance will not be the limiting factor, it will be manufacturability.

 

If we look at image sensors the current vias are 50+ um and the layer thicknesses are 100 to 150 um . Hummmm....no 20:1 aspect ratios here. Looking at CIS roadmaps they are projecting smaller vias and thinner layers and at no point do I see an aspect ratio > 5:1

 

Looking at memory stacks we see the same thing. Samsung is showing 50 um thick Si and vias of 25 - 35 um. The roadmap shows shrinkage to 10-15 um vias on 20 um layers comes next. Even if they left the thickness at 50 um this would still be 5:1 in the worst case.

 

Same for memory on logic ...check out the Intel prototypes for DRAM on processor and you will see 4-5 um vias in a bonded 10 um Si memory chip. To think they will shrink via size to 1-2 um and not further thin the wafer simply makes no sense.

 

So, high AR may be needed for MEMS or some other applications, but for 3D I see nothing mainstream required above 5:1. If these applications are out there please tell me what they are !

 

So I conclude, lets put the effort where it is warranted ....and that’s not in making 10:1 - 20:1 AR vias but rather in optimizing thinning technology (whether on a handle or on the 3D stack) alignment technology ( can we really get sub micron alignment from tools we can afford to buy? ) and bonding technology ( lets get the metal metal bonding throughput up with technology concepts like the Ziptronics DBI mentioned last week).

 

I’m going out on a limb here, but I really think that in the end chip to wafer alignment and bonding will be the COO issue not technology for 20:1 AR. ....but as Dennis Miller would say....”..that’s just my opinion...I could be wrong !”

For all the latest on 3D Integration stay linked to.....Perspectives From the Leading Edge.......


Posted by Philip Garrou on June 8, 2008 | Comments (2)


June 13, 2008
In response to: .......If it's Thursday it must be San Jose
James Lu commented:

Phil, Thanks. I hope that you are doing well now. You made a very good point. However, people have different opinions depending where they stand in tech development stages, for what specific applications, and company's culture if any. I see (1) all 4 unit processes, i.e., alignment, bonding, thinning and TSVs are quite challenging and (2) it is quite difficult for a particular company to pick one of 3D platforms/architectures and technologies. In any case, I thought that TSV would be the easiest to do because I did not believe very high aspect ratio (i.e., >5:1) is really needed. Let us see. Best Wishes, James Lu at RPI




June 23, 2008
In response to: .......If it's Thursday it must be San Jose
CS Tan commented:

Imagine that one goes with extreme thinning method using SOI wafers (let's put the cost aside for now) in future 3D IC, the added silicon layers are so thin that one can utilise standard CMOS via formation with AR at most 1:1. My guess is that as vertical via density increses to accommodate transistors level stacking, AR will go down. My two-cent worth, then again I could be wrong, just a thought. CS Tan, NTU, Singapore.





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