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Some things need repeating....
September 29, 2007

There have been a couple of interesting 3D integration related announcements in the past two weeks. They have been covered, as isolated events, on the Semiconductor  International  main web page when they happened, but its probably not a bad idea to look at them again in context of what they mean to the whole "Chips Going Vertical" theme.

 

The first was the announcement at the SIA meeting, in NYC, mid September. The main news was that “...the reality is that our ability to shrink the size of the transistor will be limited by physics sometime within the next 10 to 15 years. The industry is working on the transition from the transistor to entirely new device structures”. They continued that these entirely new devices such as carbon nanotubes, spintronics or molecular switches would not be ready for prime time production for 10 – 15 years but not to worry because in the interim we will see “....both evolutionary and revolutionary changes .... new assembly methods that will enable continuation of progress for decades to come” Specifically called out as the technology coming to the rescue was  3D IC integration

 

The second event was the announcement on Sept 18th in Taiwan by Ho-Ming Tong, chief R&D officer for ASE, that ASE was indeed working on 3D integration TSV and anticipated production during the 2008 – 2011 time frame coincident with the startup of the 45 nm node. He saw the first applications for ASE being super thin memory stacks assembled in SiPs for the latest, thinnest mobile phones and other mobile appliances. If we look further at this announcement we find that in May 2007 Aviza Technology announced it had received a “multiple system order” for its Omega i2L etch system from ASE which would “...use the system to develop TSV processing capability”. We already have seen announcements from STATS ChipPAC in May 2007 announced it had purchased the Shott Glass CMOS imaging chip packaging facility in Singapore and would be “...developing the next-generation technologies including through-silicon vias (TSV), microbump bonding methods for 3D die, silicon substrate-based system-in-package solutions...” at this site.  Amkor announced in July that they had signed a  collaboration agreement with IMEC  for 3D integration technology. So, it is obvious that the big boys in Assembly & Packaging are getting ready but what about the IC Foundries ???

 

If you read any of the literature I pointed you towards in previous blogs, you know that the easiest way to enter the 3D integration era (non memory) would be for the IC foundries to offer FEOL or BEOL production of the required TSV in the IC that you ordered. June 2007 saw the announcement from Tezzaron and Chartered that Chartered would be scaling up Tezzarons BEOL TSV process. TSMC, traditionally closed mouth about their future technical plans, has expectedly been tight lipped about 3D integration when asked (and they have been asked) .   A closer look, however, reveals a plating joint development program announced between  TSMC and Nexx in March of this year. If you read closely, Nexx reveals the 300 mm tool would be installed in Fab 7 in Hsinchu and would be used to develop TSV technology. Further detective work reveals that TSMC is a member of IMEC's core program on sub 32 nm CMOS (along with  Infineon, Intel, Micron, NXP, Panasonic, Samsung, TI and  ST Micro) . So, although we can’t say they are about to announce production plans, we can say they are probably taking a serious look at 3D integration as I blog.....

 

In the next blog, some comments on the Int Wafer Level Packaging Congress................


Posted by Philip Garrou on September 29, 2007 | Comments (1)


November 13, 2008
In response to: Some things need repeating....
krassen commented:

TSMC's Fab 7 is 200 mm





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