Link This |
Email this |
Blog This |
Comments (0)
SEMICON West '08: Hooray for CNTs and Graphene
July 16, 2008
An important part of the International Technology Roadmap for Semiconductors (ITRS) committee’s mission is to identify the next big thing. Several possible phenomena are being explored to determine what will replace current flow in the so-called “next CMOS switch.” In the meantime, CMOS will be extended by carbon nanotubes (CNTs) and graphene, at least, that is what Jim Hutchby, one of the chairs of the emerging research devices group disclosed at the ITRS briefing earlier today. Graphene or CNTs are being evaluated as possible high-mobility channel materials in MOSFETs. In addition, spin and spin transport of graphene and CNTs may provide the mechanism needed to enable spintronics. But the fun really doesn’t stop there. Other phenomena such as quantum confinement, excitons and berry phase effects are being observed. As Alain Diebold, chair of the metrology group identified, scientists have observed an electron puddle effect in single-electron transistors. So, it appears that the theme of this year’s SEMICON show, infinite possibilities, was wisely chosen. When it comes to future devices, engineers have tons of possibilities to explore.
Posted by Laura Peters on July 16, 2008 | Comments (0)
