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SEMICON West '07: Double Patterning Inches its Way Forward
July 25, 2007
Double patterning has gone from the fall-back position for EUV to the front-and-center stage technology for extending 193 nm lithography. The speed at which flash devices are transitioning (now the minimum feature and pitch driver) means there will not be enough time to develop EUV for the 32 nm node. A few things need to happen to make double patterning a reality. Overlay is a big one. Having the necessary design tools in place is key too. But for companies that have already done double patterning for prototype devices, perhaps this transition will be slightly easier than, say, going to immersion lithography.
Posted by Laura Peters on July 25, 2007 | Comments (0)
