Idaho Inventor Develops Carbon Nanotube Field Effect Transistor

ALEXANDRIA, Va., Nov. 24 -- Gurtej Sandhu of Boise, Idaho, has developed a method for making carbon nanotube field effect transistor.

According to the abstract released by the U.S. Patent & Trademark Office: "A structure and fabrication process for a carbon nanotube field effect transistor is disclosed herein. In one embodiment, a method for forming a carbon nanotube transistor starts with a substrate comprised of a bottom dielectric, a carbon nanotube layer, and a top dielectric. A pillar is formed on the top dielectric, and a sidewall gate is formed on a sidewall of the pillar. A source is formed proximate to an outer edge of the gate and in contact with the carbon nanotube layer. The pillar is then removed, the source area masked, and a drain is formed proximate to an inner edge of the gate and in contact with the carbon nanotube layer. The source and drain are self aligned to the gate as dictated by the placement of dielectric spacers on the inner and outer edges of the gate."

The patent has been assigned to Micron Technology Inc., Boise.

The inventor was issued U.S. Patent No. 7,452,759 on Nov. 18.

The original application was filed on Nov. 29, 2005, and is available at: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=7,452,759.PN.&OS=PN/7,452,759&RS=PN/7,452,759.

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