FSI International's ZETA® System ViPR(TM) Process Identified as a Key Technology for Ultra-High Dose Ion Implantation in CMOS Applications; ZETA system ViPR process reduces surface damage and material loss associated with other approaches for removing implanted photoresist

FSI International, Inc. (Nasdaq: FSII) announced today that a paper jointly presented by Hynix Semiconductor, Inc.; Varian Semiconductor Equipment Associates, Inc.; Nanometrics Incorporated; and FSI identifies the ZETA®Spray Cleaning System with ViPR(TM) technology as a key step in the integration of ultra-high dose PLAD (plasma doping) ion implantation. The paper was presented at the 17th International Conference on Ion Implantation Technology held June 8-13, 2008, in Monterey, California. The ViPR process is uniquely-capable of removing photoresist hardened by exposure to high-dose ion bombardment without the surface damage and material loss caused by traditional techniques.

"We are thrilled with the success of this work and particularly with the essential role our ViPR technology plays in enabling critical high-dose applications like dual poly gate DRAM," said Don Mitchell, FSI chairman and CEO. "Not only can we dramatically decrease the material losses caused by the multi-step, wet-ash-wet methods, we also reduce the cost, time, and process complexity by using a one-step process."

PLAD ion implantation allows manufacturers to continue shrinking device geometries, but makes photoresist difficult to remove with conventional ash-wet processes. The three step wet-ash-wet process previously used to address this problem causes unacceptable levels of material loss in subsequent processing. FSI's proprietary ViPR technology, a single-step all-wet process, elevates on-wafer chemical temperatures and reactivity to enable complete removal of the photoresist and dopant rich surface layers created in the PLAD process, while maximizing retained dopant. The elimination of the ash and ash clean steps results in a process that is faster, simpler and has lower cost-of-ownership.

Details of the work described here can be found in "Key Technologies for Ultra High Dose CMOS Applications," Y. Jeon, et al, in the proceedings of the 17thInternational Conference on Ion Implantation Technology. A copy of the abstract can be requested through the FSI website (http://www.fsi-intl.com/press/itt_paper_req.php). A full manuscript will be available in fall of 2008 in the conference proceedings published by the American Institute of Physics.

FSI International, Inc.is a global supplier of surface conditioning equipment, technology and support services for microelectronics manufacturing. Using the Company's broad portfolio of cleaning products, which include batch and single-wafer platforms for immersion, spray, vapor and CryoKinetic technologies, customers are able to achieve their process performance, flexibility and productivity goals. The Company's support services programs provide product and process enhancements to extend the life of installed FSI equipment, enabling worldwide customers to realize a higher return on their capital investment. The Company maintains a website athttp://www.fsi-intl.com.