SI CHINA     SI JAPAN
Login  |  Register          Free Newsletter Subscription
Subscribe
Email
Print
Reprint
Learn RSS

CD Measurement System Discards Libraries

Alexander E. Braun, Senior Editor -- Semiconductor International, 4/1/2001

As the industry progresses toward integrating metrology measurements into the production environment, CD-SEM technology has proven difficult to bring in line because of high costs and low speeds. As a result, this valuable and accurate CD and film-thickness measurement tool has remained an off-line resource.

Scatterometry has been considered as a solution to in-line measurement requirements, applying two basic modes: single-wavelength multi-angle and multiwavelength single-angle ellipsometry. However, both systems share one problem: They require an extensive and costly model-based library to enable them to match the diffraction pattern that they detect, and match time is influenced by library size. Also, whenever a pattern parameter is changed — pitch or CD — the library must be regenerated, often requiring third-party assistance. Another issue with ellipsometry is that, because it tends to use a large spot, measurements are sensitive to grating orientation.

Nanometrics Inc. (Milpitas, Calif.) has introduced its NanoSpec 9000cd system, which provides spectroscopic ellipsometry at normal incidence, using real-time regression analysis to eliminate the need for libraries. The system does regression analysis to actually measure structures. Its spot size is 40 µm, allowing an average measurement of all the lines under it — unlike the CD-SEM operation mode — permitting its use as a production monitor. It is also compatible with other Nanometrics platforms in use for CMP and CVD cell thickness measurement.


Sensitivity results using a SEMATECH focus exposure matrix wafer. The die are in a grid pattern — in the x direction they vary the focus and in the y direction they vary the exposure on the lithography tool. The nominal CD was 0.25 µm over an array of varying CDs across the wafer. Measured linewidths were provided, and shown here are the response curves for several of these gratings and actual linewidths due to focus change. The curves can be easily discriminated even when there is small linewidth variation — 0.16 to 0.17 µm. (Source: Nanometrics)

The platform works at two measurement modes to meet the challenge of structure variation. The first is as a production monitor. Here, the light incident on the surface is polarized — either parallel to the grating (TE mode), or perpendicular to the grating (TM mode) — with each mode generating a different curve (Figure). It is also possible to polarize the light at an off-angle that is neither 0 nor 90° to the pattern, providing ellipsometric phase information. However, this requires a measurement with at least two off-angles, making it more of an analytical tool.

In production mode, the system collects data in 1.5 sec and analyzes it within 0.5 sec, enabling the taking of several data points per wafer while keeping up with the process tool. The data provides information on the individual structure's top and bottom CD, the sidewall angle, the grating pitch and height, and film and sublayer thicknesses.

When a problem is detected in production mode, the system is capable of further, off-line structure analysis. In the top and bottom CD analysis the structure is "sliced" horizontally into two pieces, providing two results. Presumably, there will be some sidewall angle, and these results will differ from each other. In a more analytical mode the system takes more slices through the feature, providing more sidewall information. When drawing profiles, any unusual characteristic becomes obvious.

If desired, the platform does not preclude the use of the model library analytical method. Although designed to do measurements on the fly, it can use models in much the same way it does film thickness measurements, by curve-fitting to theoretical, ideal model curves.

The system's main differentiation from other platforms is that it is not library-dependent. Libraries can be cumbersome, expensive and, at times, difficult to transfer. Another issue with a library is that considerable support may sometimes be required from its manufacturer, particularly if the library is something that the user is unwilling to generate himself.

For additional information on inspection, measurement and test, go to www.semiconductor.net/imt
Email
Print
Reprint
Learn RSS

Talkback

We would love your feedback!

Post a comment

» VIEW ALL TALKBACK THREADS

Related Content

Related Content

 

By This Author

SPONSORED LINKS



 
Advertisement
SPONSORED LINKS

More Content

  • Blogs
  • Podcasts
  • Videos

Blogs

  • Alexander E. Braun
    The Measure of All Things

    August 26, 2008
    He Saw It All First
    A few days ago, while emptying an old filing cabinet my wife came across a thick folder of photo...
    More
  • Alexander E. Braun
    The Measure of All Things

    August 11, 2008
    Considering Beyond-CMOS Metrology
    Metrology has become one of the main pillars upon which the semiconductor industry bases its progres...
    More
  • » VIEW ALL BLOGS RSS

Podcasts

Videos

Advertisements





NEWSLETTERS
Plug in and get the latest SI news, trends and industry updates delivered free, directly to your inbox!

SI NewsBreak and Special Reports (Weekdays)
Wafer Processing Report (Monthly)
Lithography Report (Monthly)
Metrology Report (Monthly)
Clean Processing Report (Monthly)
Packaging Report (Twice Monthly)
©2009 Reed Business Information, a division of Reed Elsevier Inc. All rights reserved.
Use of this Web site is subject to its Terms of Use | Privacy Policy
Please visit these other Reed Business sites