Lattice Power Has Silicon Substrate LED
Lattice Power Corp. (Nanchang, China) said it is in production with light-emitting diodes (LEDs) made with its proprietary silicon-substrate technology. The company deposits GaN light-emitting materials on silicon substrates, reducing costs.
Yao Gang, Editor-in-Chief, SI China -- Semiconductor International, 7/23/2008 9:14:00 AM
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Lattice Power, located within the Nanchang high-tech development zone in Jiangxi Province, has $50M in registered capital and support from six leading venture capital firms, including Singapore’s Temasek Holdings and Kleiner Perkins Caufield & Byers (KPCB, Menlo Park, Calif.).
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| Lattice Power has developed a method to deposit gallium nitride films on a silicon substrate. |
The company has received or applied for more than 40 domestic and international patents. It claims to be the first to have successfully grown GaN on silicon, thereby improving the brightness, operating voltage and reliability of its LEDs.
The company has technical support from the Ministry of Education’s Engineering Research Center for Luminescent Materials and Devices, located within Nanchang University. The first phase of the “Silicon Substrate LED Material and Device” industrialization project with Lattice Power began mass production in May with an annual capacity of 3 billion units. The second phase of the project will invest 9 billion yuan ($137M) to boost production to 10 billion blue and green LEDs annually. A third phase will focus on lighting products.
A flat panel monitor was developed recently with Lattice Power’s blue and green LEDs, as well as a red LED obtained from an external supplier.
