New Metal-Oxide Process
Staff -- Semiconductor International, 2/1/2005
University of California scientists, working with a researcher from Washington State University at Los Alamos National Laboratory's Superconductivity Technology Center, have developed a novel method for creating high-performance, inorganic metal-oxide films using polymer-assisted deposition (PAD). The breakthrough could pave the way for a greater use of metal-oxide films into the electronics manufacturing industry.
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| A researcher applies a few drops of a water-based polymer-assisted deposition solution to a silicon wafer mounted on a spin-coater. (Source: Los Alamos National Laboratory) |
Metal oxides are emerging as technically important materials because of the wide variety of physical properties they possess, which make them attractive for applications such as photovoltaic devices, gas sensors, microelectronics and corrosion protection devices. However, the production of high-quality metal-oxide films with a desired chemical composition has been costly and challenging. Metal-oxide films are typically grown by physical or chemical vapor deposition techniques that require a vacuum system. Chemical solution deposition methods, such as sol-gel, are less capital-intensive, but many metal oxides cannot be deposited using this technique.
The PAD process distinguishes itself from other coating technologies because of its low cost and ability to coat large areas and irregular surfaces. The technique not only uses 100% of the source materials, but also has the capability to control the chemical phases, microstructures and physical properties of the materials deposited.
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