SEM/TEM of the Month

-- Semiconductor International, 9/1/2000

The left SEM shows residues after a post-metal-etch-level application. On the right is the same area after processing with 6.5% fluorine from a combination of CHF3 and CF4 in FusionGemini ES reactor. The 120-sec process was followed by a DI water rinse only. TiN ARC layers at the structures' top and base are intact with no measurable loss. (Source: Axcelis)

Please send submissions for SEM/TEM of the Month to Peter Singer, Editor-in-Chief, 58 Summer St., Andover, MA 01810 USA. 

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