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157 nm Lithography Moves Forward

Ruth DeJule, Associate Editor -- Semiconductor International, 7/1/2000

The mood was optimistic at the First International Symposium on 157 nm Lithography (Figure). Substantial progress was reflected in several of the 65 presentations made during the symposium. The biggest breakthroughs, according to International SEMATECH's Richard Harbison, were in the development of resists and pellicles, two of the most critical issues. In the pellicle arena, a soft polymer membrane material looks promising. Six months ago, the transmissivity looked good up to 90+%; however, durability and reliability were very poor. The radiation effectively punched holes in the thin, 1 µm thick membranes. Now, in addition to the transmissivity, the reliability looks positive as well. Samples are being sent to MIT Lincoln Laboratories' characterization facility for evaluation. As an added bonus, a backup material may have been identified in the form of a hard membrane, a modified fused silica material. Results appear encouraging.

A year ago, the prospect of developing a thin, single-layer resist with adequate etch resistance looked doubtful, requiring considerable invention, according to Harbison. However, a couple of suppliers presented positive data identifying a feasible platform, the fundamental chemistry for 157 nm lithography. At this point there have been no demonstrations, so resist continues to be red-flagged, a potential show-stopper. "There has been significant progress in the development of single-layer photoresist systems, and I anticipate that with the current progress, by November, the next checkpoint, resist, will go from red' to yellow,' " said Motorola's Will Conley.

Emissions at 157 nm are absorbed by water, oxygen and hydrocarbons, presenting a challenge for system designs. Unlike 248 nm and 193 nm systems, 157 nm lithography tools require an argon or nitrogen ambient with complex filtration to maintain beam intensity. Once the likelihood of nitrogen purging to O2 levels <3 ppm was doubtful, and an 8-in. CaF2 cube required for catadioptic systems seemed improbable. While there are indications all suppliers plan to use a catadioptic design, combining reflective and refractive optics, there are various approaches. The use of a CaF2 beamsplitter to effectively reduce beam path and system footprint is just one approach. To this end, SVGL (Wilton, Conn.) has shown CaF2 ingots in the size range of 12 to 15 in. that demonstrated large single-crystal feasibility for their beamsplitter catadioptic design. Post-processing to refine the optical properties is underway. Though final material quality is still being finessed, the hard part has been demonstrated, according to Jim McClay, head of the 157 nm program at SVGL. The tool manufacturer also has shown that <1 ppm nitrogen purging is achievable and that optical trains can be fabricated without hydrocarbon degradation. Lambda Physik (Fort Lauderdale, Fla.) and Cymer (San Diego) presented data showing beam bandwidth 0.6 to 0.7 pm. Typically thought to be 1 pm FWHM, the narrower bandwidth will improve overall performance in catadioptic systems but is not narrow enough for all-refractive designs, according to McClay.


A proposed schedule indicates rapid development in 157 nm to meet the 2003 manufacturing goal for the 100 nm technology node (arrow). (Source: International SEMATECH)

Several technology areas remain in the red: contamination, phase shift mask (PSM) material, metrology and performance. Outgassing of exposure tool components and resist are major issues. MIT Lincoln Labs projects lens transmission loss of 50% to 90% based on outgassing data. But the good news is that SVGL will have a 4x22 mm, 157 nm miniscanner before the end of the year for resist and process development. Exitech's small (2 mm) field tool currently is at SEMATECH for resist development. And SVGL expects to introduce a full field prototype tool by the end of 2001 and a production tool by the end of 2002. •


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