SEM/TEM of the Month
Staff -- Semiconductor International, 11/1/2002
Frans Holthuysen, an electron microscopist at Philips Research (Eindhoven, Netherlands), obtained this "Flying Alhambra" structure by the photoelectro-chemical etching of ultradeep pore arrays in n-type doped (10 Ω.cm) Si (100) in an aqueous solution of 2.5 wt% HF at elevated temperatures. In this experiment, the temperature control had unintentionally and temporarily run away from room temperature to at least 40°C, reducing the pore walls between the intended pores to nanometer dimensions.
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