World's First One Square Micron SRAM Cell
Peter Singer, Editor-in-Chief -- Semiconductor International, 5/1/2002
Researchers at Intel Corp. have built the world's smallest SRAM (static random access memory) memory cell, measuring only 1 µm2. These cells, the building blocks of memory chips, were built as part of fully functional SRAM devices manufactured using Intel's next-generation 90 nm process technology. The achievement is a milestone toward implementing the new process for production in 2003.
"Intel's one square micron SRAM cell has established a new density benchmark for silicon technology," said Sunlin Chou, senior vice president and general manager of Intel's Technology and Manufacturing Group. "This result gives us an early lead on 90 nm process technology for microprocessors and other products."
Intel researchers built 52 Mb chips, each containing 330 million transistors on a chip only 109 mm2 in size — smaller than a dime. These are the highest-capacity SRAM chips ever reported. These semiconductor devices were manufactured at Intel's 300 mm development fab (D1C) in Hillsboro, Ore., using a combination of advanced 193 and 248 nm lithography tools.
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| Intel researchers have built 52 Mb chips, each containing 330 million transistors on a chip only 109 mm2 in size — smaller than a dime. (Source: Intel) |
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