SEM/TEM of the Month
Peter Singer -- Semiconductor International, 11/1/2001
As illustrated in this TEM, Dow Chemical Co. (Midland, Mich.) has demonstrated the feasibility of a full spin-on low-k dielectric stack. Coupling porous SiLK films with the company's new spin-on etch stop material, researchers have been able to improve device performance and reduce the cost of ownership of the dielectric stack. With thicknesses in the range of 20-100 nm, Ensemble ES solutions have been engineered to be compatible with both dense and porous SiLK resins for ease of integration in 0.13 µm nodes and beyond.
Please send submissions for SEM/TEM of the Month to Peter Singer, Editor-in-Chief, 58 Summer St., Andover, MA 01810 USA.
E-mail: sieditor@aol.com.
