Hyundai Develops 256 Kb FeRAMs
-- Semiconductor International, 11/1/1998
Hyundai Electronics Industries has successfully developed 256
Kb ferroelectric random access memory (FeRAM) devices in cooperation with two
U.S. venture firms, Symetrix and Celis. The so-called 'dream memory chips,' the
first of its kind in the world, combine DRAM's low-voltage and high-speed data
processing rates and Flash memory's energy efficiency and non-volatility.
FeRAMs adopt the technology of separate plate driving systems, two-level
metal wiring to speed up the data processing rate, 1000X faster than existing
non-volatile memory chips such as Flash memories and EEPROMs. Data recording
frequencies are potentially one million times higher. These devices take DRAM's
standard of one transistor and one capacitor (1T/1C) in one cell instead of the
2T/2C structure, allowing for a smaller size and a reduction in operating
voltage from 5-3 V. They are expected to replace Flash memories, SRAMs and DRAMs
after the year 2000, according to its spokesperson. Hyundai has applied for some
100 patents at home and abroad. 
