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Near Half-l Contacts with 248 nm

Ruth DeJule, Associate Editor -- Semiconductor International, 5/1/1999

Dense arrays of 140 nm contacts using 248 nm illumination have been printed by MicroUnity (Sunnyvale, Calif.) in collaboration with National Semiconductor Corp. (NSC). Expanding on work by International SEMATECH's DELPHI project, near half-wavelength contact hole and via formation combine high-transmission ternary attenuated phase shift mask (T-APSM) and OPC technologies to create "Bessel" contacts.

Attenuated materials on PSMs are known to improve resolution, depth of focus and exposure latitude. Typically, low-transmission APSMs with less than 8% transmission have been used in production of quarter micron contacts. Pushing the technology, printing contacts below 0.18 µm require simulations to determine optimal conditions. Subsequent studies performed at NSC indicated that materials with transmissions as high as 18% can improve resolutions to 140 nm with good DOF. However, the higher transmission materials were shown to also heighten proximity effects, limiting their application to isolated contacts. Combining opaque chrome, attenuated phase shift background and a central quartz hole creates a Bessel function in the image plane with the effect of improved image log slope and increased DOF. But again, severe proximity effects were seen in simulation studies as Bessel contacts were placed closer together. Clearly, to make any contact technology viable for production, the ability to print dense arrays of contacts is mandatory.

Click for larger image - six9905l

Fig. 1. The three toned attenuated PSM represents a general layout for Bessel contact design on a reticle. (Source: MicroUnity)

To form a dense array of sub-quarter micron contacts, the NSC/ MicroUnity team judiciously blended high transmission APSM and OPC technologies. The 18% transmission and the interaction of the attenuated materials and the clear quartz center enhanced resolution and minimized change in image log slope and peak intensity. Chrome assist features compensated for the exacerbation in proximity effects by preventing side lobe printing. The size of the contact hole (quartz) and width of attenuating material, defined by the chrome shielding, were optimized to maintain constant peak intensity through focus. Finally, through tuning of OPC features (chrome shield and clear serifs) to contact pitch, side lobes were suppressed to contact sizes down to 140 nm. A ternary APSM is shown in Figure 1.

SIX9905LN2

Fig. 2. Cross-sectional SEM of a resist image indicates 140 nm contact holes on 500 nm pitch. (Source: National Semiconductor)

Applying the Bessel approach to silicon IC manufacturing, NSC and MicroUnity modified the DELPHI design to match NSC's most advanced process using AMSL/500 scanners. An 18% T-APSM mask was manufactured at Precision Semiconductor Mask Company (PSMC) in Taiwan. The 140 nm contacts were resolved with 0.83 µm focus latitude and 6% exposure latitude for a pitch of 0.98 µm, and with 0.36 µm focus latitude and 2% exposure latitude for a pitch of 0.44 µm (Fig. 2). All pitch contacts were exposed with the same nominal exposure.

The 18% transmission APSM mask is more than a solution for contacts, it is also a practical extension for poly and metal masks, noted MicroUnity's Roger Caldwell. This generalized solution, however, is not without manufacturing challenges. Though test masks have been successfully produced and tools such as the phase-shifted defect sensitivity monitors are available, blank manufacturing, inspection and repair and software for random logic remain major barriers. Today, software to support poly and metal T-APSM applications is used in production. MicroUnity has launched co-development efforts with NSC and four other companies to develop software that supports production-level random logic Bessel contact masks by year's end.

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