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Process Extendibility: A Strategic Move in Low-k Battle

Staff -- Semiconductor International, 4/1/1999

US Flag AlliedSignal and other suppliers of spin-on low-k materials are striving to offer customers the one thing a CVD solution may not be able to offer: extendibility to future device generations. "Success in this market will depend on the ability of suppliers to rapidly transform new product ideas into integrated product and process solutions for their customers," said Jack Bolick, VP and general manager of AlliedSignal's Electronic Materials Wafer Fabrication Group (Sunnyvale, Calif.). The company recently invested over $30 million in a new integration facility, expanding its characterization and demonstration capabilities to include multilevel metal integration and high-performance reliability testing of packaged devices. Employees at its Sunnyvale integration lab, complete with Class 10 cleanroom, tracks, CVD, etch, CMP, stripping and film characterization equipment with Class 1 minienvironments, will work in tandem with AlliedSignal's IC fab in Columbia, Maryland.

Fig. 1. XSEM of HOSP M1 after Electroplated Cu Deposition in 1.60 µm L/1.05 µm S COMB Structure.

Fig. 2. XSEM of HOSP M1 after Electroplated Cu Deposition in 0.35 µm L/0.40 µm S COMB Structure.

AlliedSignal offers three low-k platforms: one organic (FLARE products), one inorganic (Nanoglass products) and a new siloxane-based polymer, essentially a hybrid organic/ inorganic material, called HOSP (hybrid organic siloxane polymer). Announced at Semicon/Japan in December, HOSP offers a dielectric constant of 2.5, extendible to as low as 1.5. Beyond the three-pronged material approach, the spin-on's key advantage over low-k CVD materials may be this extendibility in k value to meet needs of future device generations. Whereas the FLARE materials are tailored for copper processes, the HOSP materials are more flexible, targeting both subtractive aluminum and copper damascene structures. "So the processes developed for aluminum technology, for instance, via etch chemistries and via clean chemistries, could be directly transferred over to a copper process without having to go through a tool change," says Nigel Hacker, project manager of HOSP. The material also offers crack-free, thicker film deposition needed for copper (> 1 µm), while having the high thermalstability(>550°C) needed for W-CVD, Al reflow and other high-temperature back-end processes. Direct-on-metal aluminum processes have been demonstrated and, in some cases, the material's planarization capability eliminates the need for CMP.

Among the various product platforms, AlliedSignal's FLARE products are the closest to production implementation, with several Japanese customers currently undergoing qualification routines (SEMATECH integrated FLARE in '97). Nanoglass, with a tunable k between 2.5 and 1.8, successfully integrated by Texas Instruments (Dallas) in early '98, is not expected to be used before the 0.13 µm generation of devices. HOSP targets today's 0.18 µm processes, with a k value of 2.5, demonstrated gapfill of features as small as 0.05 µm, and low stress deposition of films over a micron thick (50 MPa after cure and repeated thermal cycling). HOSP has been undergoing evaluation by several top-tier semiconductor manufacturers over the last six months. Figures 1 and 2 demonstrate HOSP's integration with copper. "We are confident all our low-k products will be integrated in manufacturing sites in the next twelve months," said Dave Richter, AlliedSignal's marketing manager. Both FLARE and HOSP are processed on standard tracks, whereas Nanoglass requires more custom processing. The company's Global Exact program ensures batch-to-batch, day-to-day and fab-to-fab process repeatability for customers worldwide.

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