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IBM Advance Spurs "System-on-a-Chip"

Peter Singer, Editor-in-Chief -- Semiconductor International, 4/1/1999

 

Company News
 

Applied Materials, Inc. (Santa Clara, Calif.) disclosed that LETI (Laboratoire de Technologies et d'Instrumentation), the French advanced microelectronics research center based in Grenoble, purchased an Epi Centura system to develop silicon germanium (SiGe) and silicon germanium carbon (SiGeC) process technologies. In connection with this purchase, Applied Materials will collaborate with LETI to develop and optimize the new SiGe and SiGeC process technologies for future high-performance devices.

In a cooperative effort with development partners, Siemens AG of Munich, Germany and IMEC of Leuven, Belgium, ASM America, a wholly-owned subsidiary of ASM International N.V., recently demonstrated a cluster tool integrated CMOS gate stack process that addresses the needs down to 100 nm design rules and 'probably beyond,' according to the company.

Eaton Semiconductor Equipment Operations (Beverly, Mass.) announced a joint development project with Avant! Corp. Joint activities will focus on advancing the predictive capabilities of semiconductor process simulation software to help chipmakers optimize very deep submicron (VDSM) integrated circuit (IC) fabrication processes.

Johnson Matthey Electronics (JME) (Spokane, Wash.) signed a strategic license agreement with Applied Materials, Inc. that allows JME to sell high-purity consumable parts directly to users of Applied Materials' Vectra and Electra ionized metal plasma (IMP) chambers.

Lam Research Corp. (Fremont, Calif.) announced multi-system orders for its high-throughput TCP 9600PTX high-density metal etch system. Orders are from several major global companies including Taiwan and Singapore foundries, Korean and Japanese DRAM manufacturers, and European and U.S. logic manufacturers.

Mattson Technology (Fremont, Calif.) received an order for multiple Aspen CVD systems from Samsung Electronics, headquartered in Korea. All systems will be installed in Samsung's DRAM production facilities in Kihung, Korea.

IBM (East Fishkill, N.Y.) announced that through the use of copper technology, it has found a way to efficiently place logic and memory circuits on a single piece of silicon. With IBM's technology, 24 million gates - equal to as much as eight times the processing and two to four times the memory found on today's typical PC - can be packed on a single chip.

IBM said its combination of copper and deep trench memory process technology could speed the implementation of 'system-on-a-chip.'
Previous approaches typically yielded chips that compromised the function of logic or memory or both. IBM said that with its combination of copper wiring and DRAM 'trench cell' design, chips can be built that not only maintain logic function, but actually improve memory capability as much as ten-fold making this integration viable for the first time for a wide range of applications.

IBM's thinner copper wiring is used in combination with circuitry as small as 0.15 µm, placing those circuits closer together and squeezing in more logic. IBM will first make this new embedded memory available in a custom chip template dubbed SA-27E.

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  Panel Focuses on Copper Transition

According to a panel of industry experts assembled by Cabot Corp. (Aurora, Ill.) at the recent CMP-MIC Conference in Santa Clara, as copper technology becomes increasingly critical for advanced manufacturing, issues such as cost of ownership, contamination, performance, reliability, yield, defectivity and deposition are effectively addressed by the key players from the manufacturing and supplier sides of the industry. Panelists also concluded that the greatest initial benefit of the adoption of copper damascene processes is lower total cost of ownership. For some applications, however, a 10% improvement in circuit performance has been realized. It is the transition to both low-k dielectrics and copper that will yield much improved circuit performance. From a CMP perspective, one panelist currently implementing copper into production said copper CMP challenges will be similar to those faced with tungsten.

According to VLSI Research president G. Dan Hutcheson, who attended the panel session, 'Chipmakers realize the critical role copper technology will play in the success of their fabs. They understand the process challenges of integrating this technology and are focused on resolving these issues. Supplier industry collaborations will aid in the rapid resolution of copper process integration challenges.''

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