ULSI Challenges Are Place Between Two Covers
Alexander E. Braun, Associate Editor -- Semiconductor International, 4/1/1999
Characterization and metrology are central enablers not only for the development of our industry's technology, but for improvements in manufacturing. As feature shrinks approach 0.10 µm, difficulties increase logarithmically at all levels. Other challenges are materials-related, such as transistors with high-k dielectrics and copper-on-chip interconnects and low-k dielectrics. All of these pose challenges that require the close attention and best efforts of the metrology and analytical measurements community.
Once in a while, a reference work comes along that can truly be referred to as "seminal." This is the case with Characterization and Metrology for ULSI Technology. Published by the American Institute of Physics (AIP), which consists of a collection of papers presented at its 1998 International Conference. The Conference summarized major issues and gave critical reviews of important semiconductor techniques crucial to the advancement of our technology.
The roster of editors responsible for putting together this almost 1000-page hardbound tome are names well-known in the semiconductor industry: David Seiler of NIST; Alain Diebold of SEMATECH; W. Murray Bullis of SEMI; Thomas Shaffner, formerly of Texas Instruments, now with NIST; Robert McDonald, formerly of Intel and E. Jane Walters of NIST. They worked with top-notch papers by authors working across the world.
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| Challenges facing metrology and analytical measurements community are addressed by this collection of papers presented at the AIP 1998 International Conference. |
The various subjects covered by the book are collected under the main headings of Front End, Interconnect, Back End of Line, Lithography, Packaging, Review of Critical Analytical Techniques and 300 mm and Beyond.
All 140-plus papers focus on some leading-edge aspect of metrology and inspection, such as an analytical framework for first-order CMOS device design, thin-film ellipsometry metrology, measurements in silicon, photovoltage techniques for monitoring the IC process, dimensional metrology challenges for ULSI interconnects and the challenges of next-generation lithography. All of the papers are authored by leaders in their fields, who are involved in edge-of-technology work. This collection of material provides up-to-date reviews of major issues, problems and characterization techniques for semiconductor R&D and manufacturing.
The feature that really opens up this work for use as a reference source is that the reader not only has the book available but a key-word searchable CD-ROM version of the text and figures as well. Although Acrobat Reader is perhaps not the most ideal search engine available, in this instance it serves quite well.
Characterization and Metrology for ULSI Technology is an extremely useful reference tool for anyone involved in these areas of the industry, whether in the equipment or semiconductor manufacturing sectors. It is available from the American Institute of Physics (301-209-3100).
