Cree Research Signs $3 Million Development Agreement
Staff -- Semiconductor International, 9/1/1998
C
ree Research Inc. (Durham, N.C.), a manufacturer and supplier of silicon
carbide (SiC), has entered into an agreement with The Kansai Electric
Power Co. Inc. (KEPCO, Osaka, Japan) to undertake a cooperative program
for the development of SiC power devices with a blocking voltage in
excess of 5 keV for use in power transmission systems. Cree and KEPCO
will collaborate in designing the devices, while Cree will fabricate
prototypes for testing. KEPCO has agreed to contribute program funding
of up to $3 million in development fees over the next 32 months, subject
to certain contract provisions.
SiC devices designed for high-voltage, high-power switching applications
are expected to yield substantial power savings due to reduced losses
made possible by the devices' high efficiency. SiC devices also are
expected to reduce the complexity of power transmission switching
systems since silicon carbide's ability to withstand higher temperature
and power levels should reduce the number of devices required in a
system substantially. 
