Fujitsu Develops 1Gb SDRAM

Staff -- Semiconductor International, 6/1/1998

Fujitsu Ltd. (Tokyo, Japan) developed a 1Gb synchronous DRAM (SDRAM) using 0.18 µm (180 nm) technology that has a footprint of only 505 mm².

The SDRAM uses a new data read technology, called grand prefetch, that eliminates the need for chip internal voltage step-up, making it easier to mix DRAM and logic in a chip. The grand prefetch method makes it possible to read data with a lower voltage, without degrading refresh characteristics.

Delay locked loop (DLL) technology was also used for high-precision phase control, improving clock timing error by about 20%.