Siemens Announces 400 Mb/s 1 Gbit DDR SDRAM

-- Semiconductor International, 1/1/1999

Siemens Semiconductors (Munich, Germany) recently announced production of its first double date rate (DDR) 1 Gbit SDRAM. It was developed with IBM at the company's Advanced Semiconductor Technology Center (ASTC) in East Fishkill, N.Y. Samples packaged in 16 mm-wide TSOP 88 will be available in the second quarter.

The 1 Gbit SDRAM will be available in x16 and x32 configurations and can achieve a 400 Mb per second per pin data rate. In its 32 bit-wide configuration, the device allows system data rates of 1.6 GB/sec. Main applications for the 1 Gbit SDRAM are high-end servers, workstations, networking devices and portable computing devices.

The chip uses 180 nm (0.18 µm) CMOS technology with four level metalization. The 2.5 V device is based on the trench cell concept from Siemens' previous DRAM generations, and it takes up an area of 390 mm².