Reflectance Probe
Model 80600
Staff -- Semiconductor International, 6/15/2001
Model 80600 in situ reflectance probe is designed to monitor the growth rates and optical indices of MOCVD-grown semiconductor structures such as VCSELs and solar cells. Based on a method developed at Sandia National Laboratories, it measures in real time the infrared reflectivity of the structure during growth. Using licensed software, the reflectivity signal is then analyzed to yield the growth rates and the optical constants of the different components of the structure. The probe comes in two versions: dc and ac, with a chopper and lock-in amplifier. SEMICON West Booth 1710-SF
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