Rohm and Haas Opens Immersion R&D Facility
Rohm and Haas Electronic Materials opened an R&D facility to develop materials used in 193 nm immersion lithography. The company invested ~$60M, installing an immersion scanner, track and other tools at the company’s Advanced Technology Center (ATC) in Marlborough, Mass.
Staff -- Semiconductor International, 7/8/2008
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Rohm and Haas Electronic Materials (Marlborough, Mass.) announced the opening of its immersion lithography facility intended to support the R&D of materials, including photoresists, anti-reflectant coatings (ARCs) and topcoats.
| Celebrating the opening were (left to right): Kathleen O'Connell, associate director of R&D, Microelectronic Technologies; Julie Planchet, general manager, North America and Europe, Microelectronic Technologies; Yi Hyon Paik, vice president and business group director, Rohm and Haas Electronic Materials; Jim Fahey, vice president and business unit director, Microelectronic Technologies; and Arthur Vigeant, president of the Marlborough City Council. |
The company invested ~$60M in the new facility, which is housed in the company’s Advanced Technology Center (ATC) in Marlborough. The company installed an ASML Twinscan XT:1900Gi 193 nm scanner, a 300 mm track system, and defect and metrology tools.
| Rohm and Haas installed an immersion scanner, track and metrology tools in the lithography R&D center. |
Jim Fahey, president of the company’s microelectronic technologies group, said, “We now have the same equipment our leading-edge customers are using, which gives us the ability to correlate with customers and optimize our materials for their applications beyond the 45 nm node.”
The $60M investment in the ATC is in addition to the original $30M facility, which opened in 2003.
