Semiconductor International - December 01, 2008

Millisecond and microsecond laser spike anneal improves logic and memory device performance. Shrinking thermal budgets will require a shorter anneal process, with dwell times under 400 µsec.

• Departments
• Editorial
• Nanobama: The New Tech Regime
• Expert Perspectives
• CoO Dictates Memory's Move to Copper
• New Products
• Test & Burn-in Sockets
• Jet Dispensing System
• Liquid Level Sensor
• 3-D Integration Technology
• Double Patterning Litho Tool
• CVD and ALD Tool
• Single-Wafer Cleaning Tool
• Motion System

• Facilities Supplement
• Eco-Efficient Solutions Reduce Energy, Costs
• Fab ESH: Prepare Better, Minimize Impact

• Features
• Optimize Wafer Thickness for 450 mm
• Decoupling Platform & Tool Development for Lower CoO

• Semiconductor Packaging
• Flow-Over-Wire Materials Enable Die Stacking