Semiconductor International - November 01, 2008

As features shrink beyond 32 nm, conventional pulsed nucleation layer (PNL) will not provide the necessary resistivity performance. Tungsten nucleation and CVD fill developments can extend ALD tungsten to 2X nm features and provide needed resistivity.

• Departments
• Editorial
• Can We Afford High-k for III-Vs?
• Expert Perspectives
• Racing to Excellence in PV Manufacturing
• Industry News
• Industry News: Marooned Megawatts, Unipolar CMOS, 3-D Stacking
• New Products
• Sensitive Wafer Inspection Module
• Planar Air-Bearing
• Vacuum-Compatible USB Feedthrough
• Ultrapure Storage Compound
• Defect Review
• High-Integrity Seal
• Etch Endpoint Spectograph
• Atomic Layer Deposition
• Reference Tubes
• Port Scale RF Test Solution
• Electrostatic Voltage Sensor

• Features
• 3-D ICs Enter Commercialization
• Measuring Material, Dopant Loss From Post-Implant Wafer Cleans
• Semiconductor Industry Helps to Green Solar
• Light on the Road to Low-k Integration

• Web Exclusives
• Advancements in EUV Optics Technology
• Scaling PECVD for Large-Area Solar Cells