Semiconductor International - January 01, 2008

The transition from 45 to 32 nm is likely to involve some key material changes and a major change in lithography to double patterning for critical layers. Selections will be driven by costs and specific product needs.

• Departments
• Editorial
• 2008: A Year of Cautious Optimism
• Expert Perspectives
• Lower Thermal Budgets Affect Contamination
• Industry News
• Industry News
• New Products
• Wafer Inspection Tool
• One-Step Underfill
• Single-Wafer Cleaning Tool
• Turbomolecular Vacuum Pump
• Wafer Probe Card
• Bevel Cleaning System
• ArF Excimer Laser
• Bilayer Photoresist
• Wafer Bump Inspection System
• Wafer Pre-Alignment
• CMP Endpoint System

• Features
• Executive Outlook: Driving Productivity, CoO in 2008
• Sustainable Chamber Cleaning Solutions: The Back End of the Front End
• Fab Spending Tapers in 2008
• 2008 Economic Forecast: Fairly Unpredictable