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Dresden Fab Transformation Underway
GlobalFoundries Fab 1 in Dresden, Germany, is undergoing several major changes, including integration of separate modules into an integrated facility. With a steep 32 nm MPU ramp underway that includes high-k/metal gate technology, the fab is also now running foundry wafers for non-AMD customers. Dresden general manager Udo Nothelfer said 250 new tools will be installed this year. More
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Gate First or Gate Last: Technologists Debate High-k
Technology managers have strong opinions on the merits of the gate-first and gate-last methods of depositing high-k...
Process Control, Yield Management in HB-LED Manufacturing
New Approaches to Gas Delivery Offer Significant Savings
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GlobalFoundries, TSMC Square Off at DATE
At a panel discussion at the DATE conference last week in Dresden, Germany, representatives from GlobalFoundries and TSMC said they are working to develop closer cooperation with EDA and IP vendors. As design cycles lengthen and leakage becomes a dominant issue, tighter cooperation will be needed with IP vendors to implement core-based DFM and reduce manufacturing costs, the panelists said.
McClean: Semi Content Heading Up to 27%
Speaking at an IMAPS meeting, IC Insights President Bill McClean said the industry is at nearly full capacity utilization. The system semiconductor content also is headed up, compared with previous decades, McClean said. IC Insights expects a 50% increase in capex spending this year.
Most Viewed Stories for Week of March 8, 2010
Our March print cover story gained the most attention this week, as News Editor Dave Lammers expands on the debate over gate-first or gate-last approach to high-k/metal gates. Other topics on readers' radar ran a diverse range, including CMOS MEMS, HB-LEDs and graphene wafers. The Top 5 rounds out with Gartner's prognosis on significant capex spending.
Penn State Synthesizes Graphene Wafer
Penn State researchers have produced 100 mm graphene wafers, crucial for the development of graphene-based high-frequency devices. The researchers are initially focusing on graphene materials to improve transistor performance in various RF applications.
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Paul– 3/17/2010 4:23:44 PM CDT
in response to Dresden Fab Transformation UnderwayIt's great to see that kind of investment in Dresden. Especially when it means...
Wulz– 3/17/2010 11:28:54 AM CDT
in response to Dresden Fab Transformation Underway??? thanks for the added...
PFTLE– 3/17/2010 10:28:35 AM CDT
in response to 3-D IC at the IEEE ISSCC"Tighter cooperation with IP vendors" really means giving IP vendors access to...
Jim Gobes– 3/16/2010 4:56:28 PM CDT
in response to GlobalFoundries, TSMC Square Off at DATE
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PV Group Addresses Needs for Standards, Subsidies
Bettina Weiss, senior director for photovoltaics at SEMI, gives an update on the activities of the industry organization's PV Group, and outlines some of the various economic challenges that the technology is encountering around the world during difficult economic times, as well as developments in the area of much-needed standards to enable companies engaged in this technology to work more efficiently and with a minimum of loss.
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EUV Litho Still on the Defensive
At the 2010 SPIE Advanced Lithography conference, Senior Editor Alexander E. Braun interviews Ron Kool, vice president and manager of ASML's EUV Business Unit, about the state of the much-delayed EUV litho development, and ongoing efforts to extend 193 nm immersion to 16 nm and well beyond.
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