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Most Viewed Stories for Week of March 8, 2010
Our March print cover story gained the most attention this week, as News Editor Dave Lammers expands on the debate over gate-first or gate-last approach to high-k/metal gates. Other topics on readers' radar ran a diverse range, including CMOS MEMS, HB-LEDs and graphene wafers. The Top 5 rounds out with Gartner's prognosis on significant capex spending. More
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The race to drive down the cost of through-silicon vias (TSVs) is on, with new cost targets in clear view. Industry...
Litho Cell Efficiency Enables Continuing Cost Reduction
EUV Resists Designed for Low Acid Diffusion
News from the Web
Study: Middle-Aged Women Have Better Memories Than Men
Source: www.impactlab.com
Date: 14 hours 10 minutes 4 seconds ago.Reportlinker Adds Global Strained Silicon Industry
Source: www.prnewswire.com
Date: 15 hours 16 minutes 50 seconds ago.GlobalFoundries' plans for 2010 capex of $2.5 billion
Source: www.eetimes.com
Date: 19 hours 37 minutes 50 seconds ago.Using Graphene in OLEDs will Reduce Production Costs
Source: www.azooptics.com
Date: 20 hours 45 seconds ago.
Penn State Synthesizes Graphene Wafer
Penn State researchers have produced 100 mm graphene wafers, crucial for the development of graphene-based high-frequency devices. The researchers are initially focusing on graphene materials to improve transistor performance in various RF applications.
FormFactor Opens Singapore Plant
FormFactor will manufacture wafer probe cards at the new site in Singapore, which will also serve as a global business center.IMEC, Synopsys to Co-Develop 3-D Stacked ICs
IMEC will use Synopsys TCAD tools in a collaboration to address reliability and performance concerns in through-silicon via (TSV) technology.Process Control, Yield Management in HB-LED Manufacturing
With the explosive growth in high-brightness LED (HB-LED) applications including backlighting and general illumination, device manufacturers are increasing focus on improved device performance and reduced manufacturing costs. In-line inspection during device fabrication significantly increases LED performance through improved process control and allows device makers to achieve cost savings through higher yields.
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Industry Research from In-Stat
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Worldwide Cellular Phone Components 5-Year Forecast
In the last three years, the mobile phone has transitioned from being a 24/7...
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Perspectives From the Leading Edge
March 12, 2010
3-D IC at the IEEE ISSCC
The IEEE Int Solid State Circuits Conf (ISSCC) is one of the conferences that...
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Chipworks Inside Angle
March 8, 2010
Energy Audits by MEMS
As we slowly move towards a more energy-efficient lifestyle, one of the individual...
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EUVL Focus
February 17, 2010
Picking the Winning NGL Technology
Predicting the next generation lithography (NGL) technology is a big business. For...
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Line and Rule
February 10, 2010
ICSE-V: The Fifth International Conference on Spectroscopic Ellipsometry
Everyone at the College of Nanoscale Science and Engineering (CNSE) is excited...
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Thats the hottest thing I've read all...
Ms. Aneicia M. Smikle– 3/11/2010 12:59:38 PM CST
in response to Penn State Synthesizes Graphene WaferOf course Singapore makes a lot more sense. All the major testing factories are...
John Chapman– 3/10/2010 7:36:13 PM CST
in response to FormFactor Opens Singapore PlantIs FormFactor a US or an Asian company? If its home base is in California, why...
Erik Wassenich– 3/10/2010 4:10:42 PM CST
in response to FormFactor Opens Singapore PlantNone of the pictures are...
P H– 3/9/2010 11:08:35 AM CST
in response to Deep Silicon Etching Gets Ready for 3-D ICs
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PV Group Addresses Needs for Standards, Subsidies
Bettina Weiss, senior director for photovoltaics at SEMI, gives an update on the activities of the industry organization's PV Group, and outlines some of the various economic challenges that the technology is encountering around the world during difficult economic times, as well as developments in the area of much-needed standards to enable companies engaged in this technology to work more efficiently and with a minimum of loss.
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EUV Litho Still on the Defensive
At the 2010 SPIE Advanced Lithography conference, Senior Editor Alexander E. Braun interviews Ron Kool, vice president and manager of ASML's EUV Business Unit, about the state of the much-delayed EUV litho development, and ongoing efforts to extend 193 nm immersion to 16 nm and well beyond.
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Now Playing: TSMC Video - SIA Forecast Webcast
TSMC video from November 19, 2008 Semiconductor International webcast - SIA...
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ISQED 2010
March 22-24, 2010Location: DoubleTree HotelSematech Surface Preparation & Cleaning Conference
March 22-24, 2010Location: Sheraton Austin HotelEuroSimE
April 26-28, 2010Location: Mercure Cite Mondiale
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